کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
4645264 1632203 2013 16 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
An approximation of semiconductor device of heat conduction by mixed finite element method and characteristics-mixed finite element method
موضوعات مرتبط
مهندسی و علوم پایه ریاضیات ریاضیات محاسباتی
پیش نمایش صفحه اول مقاله
An approximation of semiconductor device of heat conduction by mixed finite element method and characteristics-mixed finite element method
چکیده انگلیسی

The mathematical model for semiconductor devices of heat conduction is numerically discretized. The physical variables are the electrostatic potential, the electron and hole concentrations, and the temperature. Standard mixed finite element is used for the elliptic electric potential equation. A characteristics-mixed finite element method is presented for the two convection-dominated concentration equations. Standard finite element is used for the temperature equation of parabolic type. This scheme conserves mass locally for the concentrations. In order to derive the optimal L2L2-norm error estimates, a post-processing step is included in the approximation to the scalar concentrations. Numerical experiment is presented finally to validate the theoretical analysis.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Numerical Mathematics - Volume 70, August 2013, Pages 42–57
نویسندگان
, ,