کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
4676217 1634492 2010 14 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
RAMMS: Numerical simulation of dense snow avalanches in three-dimensional terrain
موضوعات مرتبط
مهندسی و علوم پایه علوم زمین و سیارات علوم زمین و سیاره ای (عمومی)
پیش نمایش صفحه اول مقاله
RAMMS: Numerical simulation of dense snow avalanches in three-dimensional terrain
چکیده انگلیسی

Numerical avalanche dynamics models have become an essential part of snow engineering. Coupled with field observations and historical records, they are especially helpful in understanding avalanche flow in complex terrain. However, their application poses several new challenges to avalanche engineers. A detailed understanding of the avalanche phenomena is required to construct hazard scenarios which involve the careful specification of initial conditions (release zone location and dimensions) and definition of appropriate friction parameters. The interpretation of simulation results requires an understanding of the numerical solution schemes and easy to use visualization tools. We discuss these problems by presenting the computer model RAMMS, which was specially designed by the SLF as a practical tool for avalanche engineers. RAMMS solves the depth-averaged equations governing avalanche flow with accurate second-order numerical solution schemes. The model allows the specification of multiple release zones in three-dimensional terrain. Snow cover entrainment is considered. Furthermore, two different flow rheologies can be applied: the standard Voellmy–Salm (VS) approach or a random kinetic energy (RKE) model, which accounts for the random motion and inelastic interaction between snow granules. We present the governing differential equations, highlight some of the input and output features of RAMMS and then apply the models with entrainment to simulate two well-documented avalanche events recorded at the Vallée de la Sionne test site.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Cold Regions Science and Technology - Volume 63, Issues 1–2, August 2010, Pages 1–14
نویسندگان
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