کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
4742172 1641553 2010 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of H2O on upper mantle phase transitions in MgSiO3: Is the depth of the seismic X-discontinuity an indicator of mantle water content?
موضوعات مرتبط
مهندسی و علوم پایه علوم زمین و سیارات فیزیک زمین (ژئو فیزیک)
پیش نمایش صفحه اول مقاله
Effect of H2O on upper mantle phase transitions in MgSiO3: Is the depth of the seismic X-discontinuity an indicator of mantle water content?
چکیده انگلیسی
The mantle X-discontinuity, usually assigned to positive seismic velocity reflectors in the 260-330 km depth range, has proved difficult to explain in terms of a single mineralogical phase transformation in part because of its depth variability. The coesite to stishovite transition of SiO2 matches deeper X-discontinuity depths but requires 5-10% free silica in the mantle to match observed impedance contrast. The orthoenstatite (OEn) to high-pressure clinoenstatite (HPCen) transformation of MgSiO3 also broadly coincides with depths of the X but requires chemically depleted and orthoenstatite-rich lithology at 300 km depth in order to match observed seismic impedance contrast. On the basis of high-pressure infrared spectroscopy, X-ray diffraction, and Raman spectroscopy, we show that 1300 ppm variation of H2O content in MgSiO3 can displace the transition of low-pressure clinoenstatite (LPCen) to HPCen by up to 2 GPa, similar to previous quench experiments on the OEn to HPCen phase transition, where about 30-45 km (1.0-1.5 GPa) of deflection could occur per 0.1 wt% H2O. If the mantle X-discontinuity results from pyroxene transitions in a depleted harzburgite layer, because of the strong influence of minor amounts of water on the transformation boundary, the depth of the mantle X-discontinuity could serve as a potentially sensitive indicator of water content in the upper mantle.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics of the Earth and Planetary Interiors - Volume 183, Issues 1–2, November 2010, Pages 234-244
نویسندگان
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