کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4971189 | 1450468 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High performance single supply CMOS 0.45-1Â V input to 1.1Â V output level up shifter
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This paper presents the design of a single supply CMOS level up shifter for low voltage and low energy consumption. The proposed voltage level converter is implemented using low threshold voltage transistors in 65Â nm CMOS technology. The shifter circuit designed for an output of 1.1Â V was verified, through the post-layout simulation, to be functional for an input voltage range of 0.45-1Â V. We compare our work with several other level shifters. With a 50Â fF of capacitive load, the shifter's energy-delay product is a 40% lower than a similar single supply level up shifter. Moreover, the measurements on the fabricated dies show that the proposed structure is able to drive a double capacitive load of up to 105Â fF, without any impact on the static power consumption. Monte-Carlo analysis demonstrates the robustness of the proposed shifter within a 3Ï device mismatch.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 60, February 2017, Pages 82-86
Journal: Microelectronics Journal - Volume 60, February 2017, Pages 82-86
نویسندگان
José-Carlos GarcÃa, Juan A. Montiel-Nelson, S. Nooshabadi,