کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4971205 | 1450460 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Charge pumping test technique using CMOS ring oscillator on leakage issue
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
With the scaling down of CMOS devices, traditional charge pumping measurement used to extract interface trap distribution is confronted with great challenge due to large leakage current. Special pulses with high frequency and short transition time are required to accurately extract the interface trap density, which places great demands on equipments in current charge pumping measurements. In this paper, a new charge pumping test technique is proposed, in which suitable voltage pulses are produced by CMOS ring oscillator instead of equipments. Simulation results show that frequency of the voltage pulses generated by ring oscillator can be readily greater than 1Â GHz, and rising/falling time is around 60Â ps. Due to these superiorities, new technique can measure interface trap density more exactly by totally eliminating the influence of gate leakage without any handling with the leakage current.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 68, October 2017, Pages 40-43
Journal: Microelectronics Journal - Volume 68, October 2017, Pages 40-43
نویسندگان
Yongbo Liu, Zhengyong Zhu, Huilong Zhu, Guangxing Wan, Junfeng Li, Chao Zhao,