کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4971233 | 1450465 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Universal closed-form expression based on magnetic flux density for the inductance of Tapered Through-Silicon Vias (T-TSVs)
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Universal closed-form expression based on magnetic flux density for the inductance of Tapered Through-Silicon Vias (T-TSVs) Universal closed-form expression based on magnetic flux density for the inductance of Tapered Through-Silicon Vias (T-TSVs)](/preview/png/4971233.png)
چکیده انگلیسی
In this paper, a universal closed-form expression for the parasitic inductance of tapered through-silicon vias (T-TSVs) with a frequency of up to 20 GHz is proposed. The expression, which considers skin and proximity effects, can be used to calculate the self-partial inductance and mutual-partial inductance, considering TSVs located in adjacent layers or in the same layer. When the slope angle is 90°, the obtained formulas can be reduced to the formulas of cylindrical TSVs. The comparison between the results of the proposed formulas and the results of the three-dimensional quasi-static field solver (Q3D) demonstrates that the proposed formulas are extremely accurate, with a maximum error of 2%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 63, May 2017, Pages 20-26
Journal: Microelectronics Journal - Volume 63, May 2017, Pages 20-26
نویسندگان
Zheng Mei, Gang Dong, Yintang Yang, Junping Zheng, Jingrui Chai, Weijun Zhu,