کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
4971292 1450462 2017 19 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of gate and channel engineering on multigate MOSFETs-A review
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Influence of gate and channel engineering on multigate MOSFETs-A review
چکیده انگلیسی
The design of CMOS circuits using nanoscale MOSFET has become very difficult nowadays as device modeling faces new challenges such as short channel effects and mobility degradation. Gate engineering and channel engineering reduces these challenges and improves the mobility of the carriers, resulting in improved characteristics such as drain current and transconductance. In this review paper, the effect of gate and channel engineering on the characteristics (both D.C and high frequency (a.c)) of multigate MOSFETs have been investigated and presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 66, August 2017, Pages 136-154
نویسندگان
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