کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4971353 | 1450471 | 2016 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Performance analysis of undoped and Gaussian doped cylindrical surrounding-gate MOSFET with it's small signal modeling
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The scaling of the solid-state devices are reaching its limit and it enhances the significant short channel effects. To overcome these problems, the surrounding-gate MOSFET is emerging as a promising structure and is a replacement of traditional MOSFETs. In this research work, authors have analyzed the performance of various parameters for the cylindrical surrounding-gate MOSFET using surface potential based approach and further transformation of variable technique to find the solution of the same differential equation. However, the modeling of terminal charge and trans-capacitance are also presented which is used for the circuit simulation. The influence of Gaussian doping (in vertical direction across the radius of the device) has been analyzed and solution of the surface-potential is derived based on the taylor series expansion.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 57, November 2016, Pages 66-75
Journal: Microelectronics Journal - Volume 57, November 2016, Pages 66-75
نویسندگان
Himangi Sood, Viranjay M. Srivastava, Ghanshyam Singh,