کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4971432 | 1450523 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Interface traps effect on the charge transport mechanisms in metal oxide semiconductor structures based on silicon nanocrystals
ترجمه فارسی عنوان
تله های رابط بر ساختارهای نیمه هادی فلزی اکسید فلز بر روی نانوبلورهای سیلیکون تاثیر می گذارند
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
چکیده انگلیسی
The transport phenomena in Metal-Oxide-Semiconductor (MOS) structures having silicon nanocrystals (Si-NCs) inside the dielectric layer has been investigated by high frequency Capacitance-Voltage (C-V) method and the Deep-Level Transient Spectroscopy (DLTS). For the reference samples without Si-NCs, we observe a slow electron trap for a large temperature range, which is probably a response of a series electron traps having a very close energy levels. A clear series of electron traps are evidenced in DLTS spectrum for MOS samples with Si-NCs. Their activation energies are comprised between 0.28 eV and 0.45 eV. Moreover, we observe in this DLTS spectrum, a single peak that appears at low temperature which we attributed to Si-NCs response. In MOS structure without Si-NCs, the conduction mechanism is dominated by the thermionic fast emission/capture of charge carriers from the highly doped polysilicon layer to Si-substrate through interface trap-states. However, at low temperature, the tunneling of charge carriers from highly Poly-Si to Si-substrate trough the trapping/detrapping mechanism in the Si-NCs contributed to the conduction mechanism for MOS with Si-NCs. These results are helpful to understand the principle of charge transport of MOS structures having a Si-NCs in the SiOx = 1.5 oxide matrix.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 78, November 2017, Pages 227-232
Journal: Microelectronics Reliability - Volume 78, November 2017, Pages 227-232
نویسندگان
S. Chatbouri, M. Troudi, A. Kalboussi, A. Souifi,