کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4971467 | 1450529 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A comparison of the effects of cobalt-60 γ ray irradiation on DPSA bipolar transistors at high and low injection levels
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A comparison of the effects of cobalt-60 γ ray irradiation on DPSA bipolar transistors at high and low injection levels A comparison of the effects of cobalt-60 γ ray irradiation on DPSA bipolar transistors at high and low injection levels](/preview/png/4971467.png)
چکیده انگلیسی
We investigate the γ-ray total dose induced degradation of double polysilicon self-aligned (DPSA) bipolar NPN transistors at low dose rate. Through comparing the measured results in low- and high-level injection regions, we find that the main irradiation damages related defects in two regions are quite different. In the case of lower emitter-base (E-B) bias, the damage is mainly localized in E-B interface region. For high-level injection, excess base current mainly results from radiation induced defects in intrinsic base region. Furthermore, a phenomenological model based on qualitatively analytical calculation is adopted to explain the experimental results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 71, April 2017, Pages 86-90
Journal: Microelectronics Reliability - Volume 71, April 2017, Pages 86-90
نویسندگان
Peijian Zhang, Xue Wu, Qianning Yi, Wensuo Chen, Yonghui Yang, Kunfeng Zhu, Kaizhou Tan, Yi Zhong,