کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4971494 | 1450527 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Random telegraph noise in SiGe HBTs: Reliability analysis close to SOA limit
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
In this paper, we present extensive random telegraph signal (RTS) noise characterization in SiGe heterojunction bipolar transistors. RTS noise, observed at the base, originates at the emitter periphery while at the collector side distinct RTS noise is observed at high-injection that originates from the traps in the shallow trench regions. Time constants extracted from RTS during aging tests allow understanding of trap dynamics and new defect formation within the device structure. This paper provides the first demonstration of RTS measurements during accelerated aging tests to study and understand generation of defects under bias stress in SiGe HBTs operating at the limit of their safe-operating area.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 73, June 2017, Pages 146-152
Journal: Microelectronics Reliability - Volume 73, June 2017, Pages 146-152
نویسندگان
C. Mukherjee, T. Jacquet, A. Chakravorty, T. Zimmer, J. Boeck, K. Aufinger, C. Maneux,