کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4971554 | 1450526 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs](/preview/png/4971554.png)
چکیده انگلیسی
Hot-carrier reliability for devices operating in radiation environment must be considered. In this paper, we investigate how total ionizing dose impacts the hot-carrier reliability of partially-depleted SOI I/O NMOSFETs, highlighting the effect of buried oxide. Firstly, radiation-induced damage on short channel SOI devices with 100Â nm thick Si film was investigated. After low total dose irradiation, incomplete fully-depleted state has been formed due to the non-uniformly distributed positive charges in the buried oxide. Furthermore, as the dominated factor of hot-carrier injection, the body current reduces after irradiation. Subsequently, the irradiated SOI devices were subjected to hot-carrier stress for 9000-s long time. Compared with unirradiated devices, the irradiated samples display enhanced hot-carrier degradation. We attribute this phenomenon to that radiation lowers the barrier for hot-carrier injection. Therefore, in order to ensure the reliability of SOI devices operating in harsh radiation environments, SOI devices with higher quality or corresponding hardness design should be taken.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 74, July 2017, Pages 74-80
Journal: Microelectronics Reliability - Volume 74, July 2017, Pages 74-80
نویسندگان
Lihua Dai, Xiaonian Liu, Mengying Zhang, Leqing Zhang, Zhiyuan Hu, Dawei Bi, Zhengxuan Zhang, Shichang Zou,