Keywords: کل یونیزه دوز; Space environment; Arctic; Highly Elliptical Orbit; Earth radiation belts; Total Ionizing Dose;
مقالات ISI کل یونیزه دوز (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Investigation of radiation hardened SOI wafer fabricated by ion-cut technique
Keywords: کل یونیزه دوز; Silicon-on-Insulator; Total ionizing dose; Radiation hardening; Ion-cut; Si nanocrystals; Threshold voltage;
Radiation-tolerance analysis of I-gate n-MOSFET according to isolation oxide module in the CMOS bulk process
Keywords: کل یونیزه دوز; Isolation oxide module; Leakage currents; Local oxidation of silicon; Radiation-tolerant n-MOSFET; Shallow trench isolation; Total ionizing dose;
Analysis of Total Ionizing Dose effects for highly scaled CMOS devices in Low Earth Orbit
Keywords: کل یونیزه دوز; Total Ionizing Dose; Radiation; CMOS technology; Radiation induced leakage current; Space radiation environment; Low Earth Orbit;
Three-dimensional Finite Elements Method simulation of Total Ionizing Dose in 22Â nm bulk nFinFETs
Keywords: کل یونیزه دوز; Total Ionizing Dose; Finite Elements Method; Synopsys; Simulation; FinFET; Shallow Trench Isolation;
Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs
Keywords: کل یونیزه دوز; Partially-depleted SOI; Total ionizing dose; Hot-carrier degradation; Buried oxide;
Simulation and measurement of total ionizing dose radiation induced image lag increase in pinned photodiode CMOS image sensors
Keywords: کل یونیزه دوز; CMOS image sensors; Total ionizing dose; Image lag; Pinned photodiodes;
Influences of silicon-rich shallow trench isolation on total ionizing dose hardening and gate oxide integrity in a 130Â nm partially depleted SOI CMOS technology
Keywords: کل یونیزه دوز; Shallow trench isolation; Total ionizing dose; Radiation hardening; MOSFET; Gate oxide integrity;
Total Ionizing Dose, Random Dopant Fluctuations, and its combined effect in the 45 nm PDSOI node
Keywords: کل یونیزه دوز; Simulation; Finite Elements Method; Total Ionizing Dose; Partially Depleted; Silicon-on-Insulator; Random Dopant Fluctuations;
Electromagnetic susceptibility characterization of double SOI device
Keywords: کل یونیزه دوز; Electromagnetic susceptibility; Double SOI; Total ionizing dose; Electromagnetic interference;
Radiation-enhanced gate-induced-drain-leakage current in the 130 nm partially-depleted SOI pMOSFET
Keywords: کل یونیزه دوز; Band-to-band tunneling; Gate-induced-drain-leakage; Partially-depleted silicon-on-insulator; Simulation; Total ionizing dose
Total ionizing dose sensitivity of function blocks in FRAM
Keywords: کل یونیزه دوز; Ferroelectric random access memory; Microbeam; Total ionizing dose; X-ray; Co-60
Radiation hardness of a 180Â nm SOI monolithic active pixel sensor
Keywords: کل یونیزه دوز; CMOS; Total ionizing dose; Silicon-on-Insulator;
Radiation effect for a CubeSat in slow transition from the Earth to the Moon
Keywords: کل یونیزه دوز; CubeSat; Moon; Radiation effect; Total ionizing dose;
Total ionizing dose (TID) evaluation of magnetic tunnel junction (MTJ) current sensors
Keywords: کل یونیزه دوز; Magnetic tunnel junction; Current sensor; Radiation immunity; Space applications; Total ionizing dose;
Novel Si ion implantation technique for improving the radiation hardness of SOI pseudo-MOS transistor
Keywords: کل یونیزه دوز; Silicon-on-insulator; Pseudo-MOS transistor; Ion implantation; Total ionizing dose;
Total-ionizing-dose effects and reliability of carbon nanotube FET devices
Keywords: کل یونیزه دوز; CNTFET; Total ionizing dose; Border traps
Design of a MGy radiation tolerant resolver-to-digital convertor IC for remotely operated maintenance in harsh environments
Keywords: کل یونیزه دوز; Radiation hardening; CMOS; IC; ITER; Resolver-to-digital converter; Total ionizing dose
Analysis of the charged particle radiation effect for a CubeSat transiting from Earth to Mars
Keywords: کل یونیزه دوز; CubeSat; Mars; Total ionizing dose; Solar protons; Geant4
Transportation of carriers in silicon implanted SiO2 films during ionizing radiation
Keywords: کل یونیزه دوز; Silicon dioxide; Ion implantation; Total ionizing dose; Carrier transportation
Cumulative ionizing effect from solar-terrestrial charged particles and cosmic rays for CubeSats as simulated with GEANT4
Keywords: کل یونیزه دوز; Total ionizing dose; CubeSat; GEANT4; SSAT; SPENVIS;
Analysis of bias effects on the total ionizing dose response in a 180Â nm technology
Keywords: کل یونیزه دوز; Bias condition; Oxide trapped charge; Shallow trench isolation; Substrate bias; Total ionizing dose;
Enhanced low dose rate effect of the radiation-sensitive field effect transistors developed by the National Microelectronics Research Centre
Keywords: کل یونیزه دوز; 07.87.+v; 28.41.Te; 61.80.Az; 61.82.Fk; 85.30.TvRADFET; Dosimeter; Total ionizing dose; Dose rate effect; Enhanced low dose rate effect
Total Ionizing Dose effects in 130-nm commercial CMOS technologies for HEP experiments
Keywords: کل یونیزه دوز; 85.30.De; 07.89.+b; 81.40.WxCMOS; Hardness-By-Design; STI; Total Ionizing Dose; RINCE