کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
4971669 1450532 2017 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Total Ionizing Dose, Random Dopant Fluctuations, and its combined effect in the 45 nm PDSOI node
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Total Ionizing Dose, Random Dopant Fluctuations, and its combined effect in the 45 nm PDSOI node
چکیده انگلیسی


- Total Ionizing Dose simulations on the PDSOI nMOSFET 45 nm node
- Simulation of the combined effect of oxide trapped charge and interface traps at the Si/STI and Si/BOX interfaces
- Examination of the combined effects of Total Ionizing Dose and Random Dopant Fluctuations
- RDFs reduce radiation hardness of sub-50 nm PDSOI nMOSFETs
- Increased variation in subthreshold response observed at the onset of parasitic channel inversion

Total Ionizing Dose and Random Dopant Fluctuation simulations in 45nm Partially Depleted Silicon-on-Insulator nMOSFETs are presented. Calibration is done according to the commercial IBM 45nm technology node. The importance of the bottom corner parasitic transistor to the Total Ionizing Dose response is shown with the use of ultra shallow junctions. Simulation of irradiation in two-dimensional slices of the device reveal that the majority of the charge is trapped around the silicon film and at the bottom of the Buried OXide in the case of a positive gate bias. Random Dopant Fluctuations are examined using the Sano and the Impedance Field Method. The simulation results of the two methods are in good agreement. Dopant fluctuations do not produce significant response variation pre-irradiation, but they affect post-irradiation results introducing statistical deviations and aggravating Total Ionizing Dose effects. This effect is more pronounced during weak inversion of the parasitic transistor.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 68, January 2017, Pages 21-29
نویسندگان
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