کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4971669 | 1450532 | 2017 | 9 صفحه PDF | دانلود رایگان |
- Total Ionizing Dose simulations on the PDSOI nMOSFET 45Â nm node
- Simulation of the combined effect of oxide trapped charge and interface traps at the Si/STI and Si/BOX interfaces
- Examination of the combined effects of Total Ionizing Dose and Random Dopant Fluctuations
- RDFs reduce radiation hardness of sub-50Â nm PDSOI nMOSFETs
- Increased variation in subthreshold response observed at the onset of parasitic channel inversion
Total Ionizing Dose and Random Dopant Fluctuation simulations in 45nm Partially Depleted Silicon-on-Insulator nMOSFETs are presented. Calibration is done according to the commercial IBM 45nm technology node. The importance of the bottom corner parasitic transistor to the Total Ionizing Dose response is shown with the use of ultra shallow junctions. Simulation of irradiation in two-dimensional slices of the device reveal that the majority of the charge is trapped around the silicon film and at the bottom of the Buried OXide in the case of a positive gate bias. Random Dopant Fluctuations are examined using the Sano and the Impedance Field Method. The simulation results of the two methods are in good agreement. Dopant fluctuations do not produce significant response variation pre-irradiation, but they affect post-irradiation results introducing statistical deviations and aggravating Total Ionizing Dose effects. This effect is more pronounced during weak inversion of the parasitic transistor.
Journal: Microelectronics Reliability - Volume 68, January 2017, Pages 21-29