Radiation-enhanced gate-induced-drain-leakage current in the 130 nm partially-depleted SOI pMOSFET

• Radiation-induced off-state leakage increase is observed for I/O pMOSFET.
• Both interface traps in gate oxide and trapped charge in BOX lead to the degradation.
• Isothermal annealing can recover the leakage current to the pre-irradiation level.

The total ionizing dose (TID) effect of the pMOSFET from 130 nm partially-depleted silicon-on-insulator (PDSOI) is investigated. The data obtained from 60Co γ-ray irradiation experiments indicate that input/output (I/O) device is more susceptible to TID effect than the core device. An anomalous off-state leakage increase is observed for I/O pMOSFET when drain is biased at a high voltage after irradiation. It is proved that this radiation-induced leakage relates to the enhanced gate-induce-drain-leakage (GIDL). Both the radiation-induced interface traps at the gate-oxide/body interface and the oxide trapped charges in the buried oxide (BOX) are responsible for the growth of the leakage current. These conclusions are also verified by the TCAD simulations. The isothermal annealing can recover the leakage current to the pre-irradiation level.