Total-ionizing-dose effects and reliability of carbon nanotube FET devices

• Relative stability is observed during constant-voltage stress for carbon nanotube field effect transistors.
• We report irradiation/post-rad annealing under positive gate bias induces more degradation.
• The degradation after 10-keV X-ray irradiation depends on bias.
• Cycling of the on/off state leads to significant degradation in the memory window.

Electrical stress and 10-keV X-ray irradiation and annealing responses are evaluated for carbon nanotube field effect transistors for nonvolatile memory applications. Less than 3% change in the drain current is observed during constant-voltage stress. Irradiation and annealing under positive gate bias induces more degradation in both drain current and memory window than under negative bias. Cycling of the on/off state leads to significant degradation in the memory window.