Keywords: تله های مرزی; Silicon sensors; Radiation damage; TCAD simulations; Oxide charges; Border traps; Interface traps;
مقالات ISI تله های مرزی (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Normally-off Al2O3/GaN MOSFET: Role of border traps on the device transport characteristics
Keywords: تله های مرزی; AlGaN/GaN MOSFET; Border traps; Self-terminating; Normally-off;
Border traps and bias-temperature instabilities in MOS devices
Keywords: تله های مرزی; Border traps; Interface traps; Oxide traps; Bias-temperature instability; Defects; MOS; Radiation effects; 1/f noise; SiGe; InGaAs; Compound semiconductor; Graphene; Nanotube; Carbon; Black phosphorus;
Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealing
Keywords: تله های مرزی; Border traps; High-k; InGaAs; CV hysteresis; Accumulation frequency dispersion; Forming gas annealing;
Deducing the apparent flat-band position Vafb and the doping level of large area single layer graphene MOS capacitors
Keywords: تله های مرزی; Large area; CVD graphene; Frequency dispersion; Apparent flat-band; Border traps;
On MOS admittance modeling to study border trap capture/emission and its effect on electrical behavior of high-k/III-V MOS devices
Keywords: تله های مرزی; MOS; III-V; Admittance model; Capacitance; Frequency dispersion; Border traps;
The impact of interface states on the mobility and drive current of In0.53Ga0.47AsIn0.53Ga0.47As semiconductor n-MOSFETs
Keywords: تله های مرزی; Monte Carlo; III–V semiconductors; Border traps; Interface states; Modelling
Small-signal admittance model of multi-traps distributed over energy and space in the insulator of MIS tunnel structures
Keywords: تله های مرزی; Border traps; Tunneling; Admittance model; MIS tunnel diode; C-G-V characteristics;
Total-ionizing-dose effects and reliability of carbon nanotube FET devices
Keywords: تله های مرزی; CNTFET; Total ionizing dose; Border traps
Si cap passivation for Ge nMOS applications
Keywords: تله های مرزی; Ge/high-κ interface; Border traps; nMOS; Si cap passivation;
From defects creation to circuit reliability – A bottom-up approach (invited)
Keywords: تله های مرزی; Channel cold carriers; Hot-Carrier degradation; Ultra-thin gate-oxide; Interface traps generation; Border traps; Trapped oxide charges; Device lifetime; Multi vibrational excitation; Bias temperature stress; Design-in Reliability; Spice models
Impact of implantation on the properties of N2O-nitrided oxides of p+- and n+-gate MOS devices
Keywords: تله های مرزی; 61.80.Jh; 77.22.Jp; 73.61.Ng; Border traps; Implantation; Hard breakdown; Nitrided oxides;