Impact of implantation on the properties of N2O-nitrided oxides of p+- and n+-gate MOS devices

The impact of the gate implantation on properties of N2O-nitrided thermal oxides MOS dielectric layers were evaluated in this study via current-voltage, j-ramp and current-temperature techniques. The data obtained show that implantation with boron of poly-Si gates can result in generation of border traps in oxides. The energy position of traps generated in the oxides after Fowler-Nordheim voltage stress and after hard breakdown treatments were evaluated.