Deducing the apparent flat-band position Vafb and the doping level of large area single layer graphene MOS capacitors

Deducing the apparent flat-band position Vafb and the doping level of large area single layer graphene MOS capacitors

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 147, 1 November 2015, Pages 314-317

H.C.D. Lin, I. Asselberghs, A. Vais, G. Arutchelvan, A. Delabie, M. Heyns, A. Mocuta, I. Radu, A. Thean,