Total ionizing dose sensitivity of function blocks in FRAM

• Synchrotron X-ray microbeam was used to identify TID sensitivity of FRAM circuits.
• Comparative TID sensitivity and failure mode of many different functional blocks were comprehensively analyzed.
• Co-60 γ ray irradiation was performed for comparative study of the spot irradiation and wide field irradiation.

The total ionizing dose (TID) sensitivity of the function blocks, including the memory array, sense amplifier, row decoder, column decoder and I/O port, of the ferroelectric random access memory (FRAM) are investigated. An X-ray microbeam is used for the selective irradiation and detailed detection. The ferroelectric memory array is proved to have higher resistance to TID than the peripheral control circuitry, whereas the sense amplifier is the most sensitive parts in the FRAM circuitry. The failure phenomenon is studied when each function block is irradiated, and the failure mechanism is discussed based on each block’s technological and circuital characteristics. In addition, the Co-60 γ ray irradiation test is also performed to offer a comparison of the spot and global irradiation.