
Confinement-free annealing induced ferroelectricity in Hf0.5Zr0.5O2 thin films
Keywords: حافظه دسترسی تصادفی فدرال; Ferroelectricity; Multicomponent Hf0.5Zr0.5O2 dielectrics; Atomic layer deposition; Ferroelectric random access memory;