Analysis of bias effects on the total ionizing dose response in a 180Â nm technology

► ON bias is the worst bias condition for the ON, PASS and OFF bias modes. ► Larger gate bias during irradiation leads to more pronounced characteristic degradation. ► TID induced STI leakage can be suppressed by negative operating substrate bias voltage. ► Negative substrate bias during irradiation leads to larger increase of off-state leakage. ► Electric field in the STI oxide greatly influences the device's radiation effect.