کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4971578 | 1450524 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analysis of time-dependent dielectric breakdown induced aging of SRAM cache with different configurations
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Time dependent dielectric breakdown degrades the reliability of SRAM cache. A novel methodology to estimate SRAM cache reliability and performance is presented. The performance and reliability characteristics are obtained from activity extraction and Monte Carlo simulations, considering device dimensions, process variations, the stress probability, and the thermal distribution. Based on the reliability-performance estimation methodology, caches with various settings on associativity, cache line size, and cache size are analysed and compared. Experiments show that there exists a contradiction between performance and reliability for different cache configurations. Understanding the variation of performance and reliability can provide SRAM designers with insight on reliability-performance trade-offs for cache system design.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volumes 76â77, September 2017, Pages 87-91
Journal: Microelectronics Reliability - Volumes 76â77, September 2017, Pages 87-91
نویسندگان
Rui Zhang, Taizhi Liu, Kexin Yang, Linda Milor,