کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
4971578 1450524 2017 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Analysis of time-dependent dielectric breakdown induced aging of SRAM cache with different configurations
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Analysis of time-dependent dielectric breakdown induced aging of SRAM cache with different configurations
چکیده انگلیسی
Time dependent dielectric breakdown degrades the reliability of SRAM cache. A novel methodology to estimate SRAM cache reliability and performance is presented. The performance and reliability characteristics are obtained from activity extraction and Monte Carlo simulations, considering device dimensions, process variations, the stress probability, and the thermal distribution. Based on the reliability-performance estimation methodology, caches with various settings on associativity, cache line size, and cache size are analysed and compared. Experiments show that there exists a contradiction between performance and reliability for different cache configurations. Understanding the variation of performance and reliability can provide SRAM designers with insight on reliability-performance trade-offs for cache system design.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volumes 76–77, September 2017, Pages 87-91
نویسندگان
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