کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4971596 | 1450524 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Identification of the generation/rupture mechanism of filamentary conductive paths in ReRAM devices using oxide failure analysis
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Constant (CVS) and ramped (RVS) voltage stress data are combined with the aim of identifying the acceleration law that drives the generation and rupture of filamentary conductive paths in HfO2-based ReRAM devices. The acceleration factor integral (AFI) method is used to find the equivalency between RVS and CVS in order to compare the SET and RESET events statistics and determine the adequacy of different degradation models frequently considered in oxide failure analysis: voltage power-law, E-model, and 1/E-model. The obtained results indicate that the E-model, with E the local electric field, exhibits the lowest dispersion in the acceleration factor values both for the SET and RESET transitions as well as the best overall consistency.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volumes 76â77, September 2017, Pages 178-183
Journal: Microelectronics Reliability - Volumes 76â77, September 2017, Pages 178-183
نویسندگان
A. Rodriguez-Fernandez, C. Cagli, L. Perniola, J. Suñé, E. Miranda,