کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4971687 | 1450531 | 2017 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Aging comparative analysis of high-performance FinFET and CMOS flip-flops
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
This paper presents a comparative performance analysis to investigate the impact of aging mechanisms on various flip-flops in CMOS and FinFET technologies. We consider Bias Temperature Instability (BTI) and Hot Carrier Injection (HCI) effects on the robustness of high performance flip-flops. To apply BTI and HCI aging mechanisms, we utilize long-term model to estimate â Vth and employ the updated Vth in transistor model file. The simulation results on performance analysis indicate the high ranking of various flip-flops considering speed and power consumption in each CMOS and FinFET technologies, moreover, approve the superiority of static FinFET flip-flops over CMOS flip-flops. In addition, a comparative analysis considering temperature and VDD variations over different FinFET flip-flop structures demonstrates the average percentages of TDQmin and PDP degradation against aging mechanisms are significantly less than similar CMOS flip-flops.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 69, February 2017, Pages 52-59
Journal: Microelectronics Reliability - Volume 69, February 2017, Pages 52-59
نویسندگان
Shiva Taghipour, Rahebeh Niaraki Asli,