کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4971780 | 1450533 | 2016 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A 2D compact model for lightly doped DG MOSFETs (P-DGFETs) including negative bias temperature instability (NBTI) and short channel effects (SCEs)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A 2D compact model for lightly doped DG MOSFETs (P-DGFETs) including negative bias temperature instability (NBTI) and short channel effects (SCEs) A 2D compact model for lightly doped DG MOSFETs (P-DGFETs) including negative bias temperature instability (NBTI) and short channel effects (SCEs)](/preview/png/4971780.png)
چکیده انگلیسی
In this paper, a 2D compact model for potential and threshold voltage for lightly doped symmetrical double gate (DG) p-channel MOSFETs (PMOS) including negative bias temperature instability (NBTI) and short channel effects (SCEs) is presented. The model is dedicated to nano scale MOSFETs below 30Â nm. In this model, both effects of interface state generation and hole-trapping are considered. Moreover, the effects of scaling down the oxide thickness and the channel thickness on NBTI are discussed. Our model is matched very well with numerical simulations obtained from COMSOL multi-physics at different drain voltages (Vd). A 4% shift in threshold voltage roll-off and 47% shift in drain induced barrier lowering (DIBL) is achieved at a gate length of 10Â nm after 10Â years of operation at a frequency of 1Â GHz.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 67, December 2016, Pages 82-88
Journal: Microelectronics Reliability - Volume 67, December 2016, Pages 82-88
نویسندگان
Omnia Samy, Hamdy Abdelhamid, Yehea Ismail, Abdelhalim Zekry,