Potentiality of healing techniques in hot-carrier damaged 28Â nm FDSOI CMOS nodes

Fig. 12: Degradation of (LVT) RO frequency drift Fosc/Fosc,0 as a function of ts for 4 ROs (28FD) measured at stress using On the Fly technique at 125 °C. FBB sense application with VB = ± 0.3 V in NMOS and PMOS after 6.104 s, cures almost totally the long term AC stressing.164