Full Length ArticleSi-doped porous TiO2 coatings enhanced in vitro angiogenic behavior of human umbilical vein endothelial cells

- Silicon-doped porous TiO2 coatings were fabricated via plasma electrolyte oxidation method (PEO) successfully.
- Si doping induced dose-dependent stimulation in angiogenic activities of HUVECs.
- Larger amount of Si results in reduced angiogenic responses.

Recent evidence demonstrates that vessel involvement is crucial in various bone remodeling situations, indicating that blood vessel formation within or surrounding the implant is essential for establishment of rigid implant fixation. In this work, the ability of the silicon-doped porous TiO2 coatings fabricated via plasma electrolyte oxidation method (PEO) to enhance the angiogenic potential of human umbilical vein endothelial cells (HUVECs) were investigated. The cellular responses of HUVECs on the silicon-doped porous TiO2 coatings were studied through cell proliferation, vascular endothelial growth factor (VEGF) secretion, and angiogenic-associated gene (VEGF, HIF-1α and HGF) expression analysis. The results show that small amount of silicon significantly enhanced angiogenic activity of HUVECs, while larger amount of silicon appears excessive. Hence, the silicon-doped TiO2 coating offers a potential solution to improve bone vascularization to achieve efficient osseointegration and restoration of function after implantation.

Small amount of silicon doping significantly enhanced angiogenic activity of HUVECs.100