کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5025240 1470580 2017 15 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A first principles investigation of the effect of aluminum, gallium and indium impurities on optical properties of β-Si3N4 structure
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
A first principles investigation of the effect of aluminum, gallium and indium impurities on optical properties of β-Si3N4 structure
چکیده انگلیسی
In this study, effects of some impurity atoms included in IIIA group such as Al, Ga, and In on the optical properties of the β-Si3N4 structure have been discussed. The calculations were made using Density Functional Theory (DFT) in 0-15 eV range and local density approximation (LDA) as the exchange-correlation. Using the real and the imaginary parts of the complex dielectric function, the basic optical properties of β-Si3N4 such as dielectric coefficient, refractive index, absorption, reflection coefficients have been investigated. As a result of the calculations, it is determined that optical properties of structure have been significantly changed with doping.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - International Journal for Light and Electron Optics - Volume 147, October 2017, Pages 115-122
نویسندگان
, , , , ,