کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5025966 | 1470596 | 2017 | 18 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modeling of temperature and thermal-stress of silicon irradiated by a long pulsed laser and its damage evaluation
ترجمه فارسی عنوان
مدلسازی دما و استحکام حرارتی سیلیکون تابش شده با یک لیزر پالس طولانی و ارزیابی آسیب آن
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کلمات کلیدی
ترس حرارتی، لیزر طولانی پالس، آسیب لیزری، راه حل های تحلیلی،
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی (عمومی)
چکیده انگلیسی
In this paper, temperature and thermal-stress of silicon irradiated by a long pulsed laser are modeled and its damage evaluation is presented. Physical model is established based on the classical heat transfer and thermal-elasticity theory, integral transform method is used to solve the governing equations and analytical solutions of temperature and thermal-stress are obtained. Effects of radial locations, axial depths and laser spot radius on the temperature and thermal-stress are studied. Results show that, the surface temperature of the silicon material is the highest, and with the increase of depth, temperature gradually decreased; the maximum value of the three components of thermal-stress are all compressive stress, and the maximum value is located on the surface of the silicon; with the increase of depth, the thermal-stress value is gradually reduced; the damage of the long pulsed laser with a pulse width of 1Â ms to silicon material is mainly the melting damage.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - International Journal for Light and Electron Optics - Volume 131, February 2017, Pages 574-581
Journal: Optik - International Journal for Light and Electron Optics - Volume 131, February 2017, Pages 574-581
نویسندگان
Guibo Chen, Juan Bi,