کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5026113 | 1470591 | 2017 | 22 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Plasmon-electron dynamics at the Au/InSe and Y/InSe interfaces designed as dual gigahertz-terahertz filters
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Plasmon-electron dynamics at the Au/InSe and Y/InSe interfaces designed as dual gigahertz-terahertz filters Plasmon-electron dynamics at the Au/InSe and Y/InSe interfaces designed as dual gigahertz-terahertz filters](/preview/png/5026113.png)
چکیده انگلیسی
In this work, the X-ray diffraction, the Scanning electron microscopy, the energy dispersive X-ray, the Raman, The UV-vis light and the impedance spectral techniques are employed to explore the structural, vibrational, optical and electrical properties of the Au/InSe and Y/InSe thin film interfaces. It was shown that with its amorphous nature of crystallization, the InSe thin films exhibited n-type conductivity due to the 3% excess selenium. For this form of InSe, the only active Raman spectral line is 121 (cmâ1). In addition to the design of the energy band diagram, the analysis the dielectric spectra and the optical conductivities were possible in the frequency range of 270-1000Â THz. The modeling of the optical conductivities of the Au, Y, Au/InSe and Y/InSe with the help of Lorentz approach for optical conduction, assured that the conduction is dominated by the resonant plasmon-electron interactions at the metals and metals/semiconductors interfaces. It also allowed tabulating the necessary parameters for possible applications in terahertz technology. These parameters are the electron effective masses, the free electron densities, the electron bounded plasmon frequencies, the electron scattering times, the reduced resonant frequencies and the drift mobilities. On the other hand, the impedance spectral analysis of the Y/InSe/Au interfaces in the frequency range of 0.01-1.80Â GHz, revealed negative capacitance effect associated with band filter features that exhibit maximum transition line at 1.17Â GHz. This value nominates the interface as a member of filter classes in the gigahertz technology.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - International Journal for Light and Electron Optics - Volume 136, May 2017, Pages 524-530
Journal: Optik - International Journal for Light and Electron Optics - Volume 136, May 2017, Pages 524-530
نویسندگان
S.R. Alharbi, A.F. Qasrawi,