Construction of semiconductor nanocomposite on porous silicon using chemical method

Porous silicon (PSi) samples fabricated by electrochemical etching method at current density (40) mA/cm2 with different etching time (3, 3:30, 4, 4:30) min where ZnO, TiO2 and 70% ZnO:30% TiO2 deposited by chemical spray pyrolysis to be applied for gas sensors, these sample have been investigated scanning electron microscopy (FE-SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. XRD measurement has confirmed the crystallinity with Nanopores were produced on the PSi layer. The (FE-SEM) photographs revealed the highly porous structure which proved ideal for the performance as gas sensing element. AFM confirms the nanometric size.