Investigation of ceria by combined Raman, UV–vis and X-ray photoelectron spectroscopy

Surface and bulk oxygen vacancy defects in ceria powder samples were investigated by Raman, UV–vis and X-ray photoelectron spectroscopy combined in one experimental setup for the first time. Analysis of surface reduction (defects) is based on changes in Ce3d photoemission lines. For ceria reduced by X-ray exposure UV–vis spectra reveal an electronic transition at around 500 nm. The nature of the defects is specified by the presence of peroxide and hydroxy Raman bands at 832 cm− 1 and 3664 cm− 1. Our results demonstrate the potential of a combined spectroscopic approach for characterization of defects located at the surface and in the bulk of ceria.

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► Surface and bulk defects in ceria powder studied by multiple in situ spectroscopy.
► Surface defects quantified by analysis of Ce3d photoemission.
► Surface/bulk defects characterized by Vis absorption and peroxy/hydroxy Raman bands.
► Complementary information on ceria defects by combined Raman/UV–Vis/XPS.