کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5150389 | 1498239 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Impedance spectroscopy of Gd-doped ceria analyzed by genetic programming (ISGP) method
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This work presents the distribution function of relaxation time (DFRT) analysis of Gd doped ceria (GDC) and cobalt co-doped GDC prepared by precipitation method. Ionic transport properties and grain-boundary phenomena are discussed thoroughly based on the DFRT. The impedance results, especially the bulk and grain-boundary conductivities (Ïb and Ïgb) and activation energies (Eb and Egb) obtained from the ISGP, are compared with the values obtained from the Equivalent Circuit Model. Grain boundary space charge (SC) effects discussed so far in the literature, generally do not consider the defect interaction between the oxygen vacancies and acceptor dopants in ceria and other oxide ion conductors. However, ISGP study clearly evidence the co-existence of SC effect and defect association in grain boundary regions, and both contribute to the grain boundary resistance (Rgb) at lower temperatures. The effect of sintering aid (Co) on the grain boundary activity is discussed considering both phenomena. Lower sintering temperature of the samples results in a relatively smaller grain boundary potential (Ф(0)) i.e., 0.15, 0.17 and 0.19 V at 300 °C in 0, 1 and 3 mol% Co co-doped GDC, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Ionics - Volume 304, June 2017, Pages 145-149
Journal: Solid State Ionics - Volume 304, June 2017, Pages 145-149
نویسندگان
Ashok Kumar Baral, Yoed Tsur,