کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5346936 | 1503551 | 2017 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Degradation pattern of black phosphorus multilayer fieldâeffect transistors in ambient conditions: Strategy for contact resistance engineering in BP transistors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Black phosphorus (BP) has been proposed as a future optoelectronic material owing to its direct bandgap with excellent electrical performances. However, oxygen (O2) and water (H2O) molecules in an ambient condition can create undesired bubbles on the surface of the BP, resulting in hampering its excellent intrinsic properties. Here, we report the electrical degradation pattern of a mechanically exfoliated BP field-effect transistor (FET) in terms of the channel and contact, separately. Various electrical parameters such as the threshold voltage (VTH), carrier mobility (μ), contact resistance (RCT) and channel resistance (RCH) are estimated by the Y function method (YFM) with respect to time (up to 2000 min). It is found that RCT reduces and then, increases with time; whereas, the behavior of RCH is vice versa in ambient conditions. We attribute these effects to oxygen doping at the contact and the surface oxidation effects on the surface of the BP, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 419, 15 October 2017, Pages 637-641
Journal: Applied Surface Science - Volume 419, 15 October 2017, Pages 637-641
نویسندگان
Byung Chul Lee, Chul Min Kim, Ho-Kyun Jang, Jae Woo Lee, Min-Kyu Joo, Gyu-Tae Kim,