ZnSb-based thin films prepared by ns-PLD for thermoelectric applications

Zinc antimonide-based nanostructured thin films were produced by Pulsed Laser Deposition (PLD) using a ns-ArF laser (193 nm) and a multi-target deposition system. The films were prepared according to a multi-layer structure, obtained by adding different dopants (Cr, Ag) within the ZnSb matrix. The influence of the dopant introduction on the structural, compositional and electronic properties of the deposited films was studied in the temperature range 300-600 K. The power factor (PF) of films with dopant concentration of 5 at.% resulted significantly increased up to 100-200 μW/mK2 at 600 K with respect to that of undoped films.