کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5347158 | 1388038 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
ZnO (Zinc oxide)/Si (Silicon) heterojunctions were prepared by depositing n-type ZnO films on p-type single crystal Si substrates using magnetron sputtering. A boron and gallium co-doped ZnO (BGZO) high conductivity intermediate layer was deposited between aurum (Au) electrodes and ZnO films. The influence of the BGZO layer on the properties of Au/ZnO contacts and the performance of ZnO/Si heterojunctions was investigated. The results show an improvement in contact resistance by introducing the BGZO layer. Compared with the ZnO/Si heterojunction, the BGZO/ZnO/Si heterojunction exhibits a larger forward current, a smaller turn-on voltage and higher ratio of ultraviolet (UV) photo current/dark current.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 428, 15 January 2018, Pages 61-65
Journal: Applied Surface Science - Volume 428, 15 January 2018, Pages 61-65
نویسندگان
Yuanxi Lu, Jian Huang, Bing Li, Ke Tang, Yuncheng Ma, Meng Cao, Lin Wang, Linjun Wang,