Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation

Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 365, 1 March 2016, Pages 376-379

Seung Hyun Kim, Tae Jun Seok, Hyun Soo Jin, Woo-Byoung Kim, Tae Joo Park,