کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5348115 | 1503574 | 2017 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Electrical and nano-structural properties of Zr and WC-based Schottky power diodes are compared and used for investigating oxide-related effects at the diamond/metal interface. Differences in Schottky barrier heights and ideality factors of both structures are shown to be related with the modification of the oxygen-terminated diamond/metal interface configuration. Oxide formation, oxide thickness variations and interfacial oxygen redistribution, associated with thermal treatment are demonstrated. Ideality factors close to ideality (nWC = 1.02 and nZr = 1.16) are obtained after thermal treatment and are shown to be related with the relative oxygen content at the surface (OCRWC = 3.03 and OCRZr = 1.5). Indeed, thermal treatment at higher temperatures is shown to promote an escape of oxygen for the case of the WC diode, while it generates a sharper accumulation of oxygen at the metal/diamond interface for the case of Zr diode. Therefore, the metal-oxygen affinity is shown to be a key parameter to improve diamond-based Schottky diodes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 395, 15 February 2017, Pages 200-207
Journal: Applied Surface Science - Volume 395, 15 February 2017, Pages 200-207
نویسندگان
J.C. Piñero, D. Araújo, A. Fiori, A. Traoré, M.P. Villar, D. Eon, P. Muret, J. Pernot, T. Teraji,