Annealing recovery of nanoscale silicon surface damage caused by Ga focused ion beam

- The defects growth increased rapidly at low dose, and then significantly slowed down before continued amorphous layer formed.
- The swelling of implantation region results from the combination of surface roughing and the decrease in the surface density.
- Both melting on the top surface and recrystallization at crystalline/amorphous interface have existed as annealing at 2400 K, which is near the melting point.
- Ga ions migrated together and were swept by the c-Si/a-Si interface during annealing, left sunken at the surface.