Reconstruction of GaAs/AlAs supperlattice multilayer structure by quantification of AES and SIMS sputter depth profiles

The GaAs/AlAs superlattice multilayer structures were deposited on GaAs (1 0 0) substrates by molecular beam epitaxial (MBE) technique. The as-prepared samples were characterized respectively by Auger Electron Spectroscopy (AES) and Secondary Ion Mass Spectroscopy (SIMS) depth profiling techniques. The measured depth profiles were then fitted by the Mixing-Roughness-Information (MRI) model. The depth resolution values for both depth profiling techniques were evaluated quantitatively from the fitted MRI parameters and the as-prepared GaAs/AlAs multilayer structure was determined accordingly.