Influences of electric current on the wettability and interfacial microstructure in Sn/Fe system

The wettability of oxidized and clean Fe substrates by liquid Sn was investigated using a dispensed sessile drop method with and without the application of a direct current (DC) and their interfacial microstructures were compared. The initial contact angles were 107 ± 3° at 623 K when the Fe substrate was covered by an oxide film, and they did not show an appreciable decrease during isothermal dwells in the absence of DC application but progressively decreased to 42 ± 3° when a 7.5 ampere current was applied. However, in the case of the oxide film being removed by a high-vacuum pre-annealing treatment at 1073 K, the current and its polarity had a negligible effect on the wetting behavior. Nevertheless, they had a noticeable influence on the interfacial microstructure. In the absence of DC, the interface was covered by a product layer consisting of a single FeSn2 phase for the samples tested at 623 K and the FeSn2/FeSn2 grain boundaries were incompletely wetted by the Sn melt; whereas, under DC, the reaction layer was much thicker and the Sn melt wet well the FeSn2/FeSn2 grain boundaries. Moreover, a FeSn phase also formed as a result of enhanced mass transfer. The amount of the FeSn phase was larger and the grain boundary wetting of FeSn2 by liquid Sn was better for the current flowing from the molten Sn drop to the Fe substrate due to an electromigration effect.