کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5348870 1503636 2015 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effective implantation of light emitting centers by plasma immersion ion implantation and focused ion beam methods into nanosized diamond
ترجمه فارسی عنوان
پیوند موثر مراکز نوری با استفاده از کاشت یون های غوطه ور پلاسما و روش های پرتو یونی متمرکز به الماس های نانوسیم
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
چکیده انگلیسی
Two different implantation techniques, plasma immersion ion implantation and focused ion beam, were used to introduce nitrogen ions into detonation nanodiamond crystals with the aim to create nitrogen-vacancy related optically active centers of light emission in near UV region. Previously samples were subjected to a defect creation process by helium irradiation in both cases. Heat treatments at different temperatures (750 °C, 450 °C) were applied in order to initiate the formation of nitrogen-vacancy related complex centers and to decrease the sp2 carbon content formed under different treatments. As a result, a relatively narrow and intensive emission band with fine structure at 2.98, 2.83 and 2.71 eV photon energies was observed in the light emission spectrum. It was assigned to the N3 complex defect center. The formation of this defect center can be expected by taking into account the relatively high dose of implanted nitrogen ions and the overlapped depth distribution of vacancies and nitrogen. The calculated depth profiles distribution for both implanted nitrogen and helium by SRIM simulation support this expectation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 328, 15 February 2015, Pages 577-582
نویسندگان
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