کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5349143 | 1503641 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effective surface passivation of p-type crystalline silicon with silicon oxides formed by light-induced anodisation
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
CzochralskiSRVPIDETPMOSLIAsurface passivation - passivation سطحAnodisation - آنودایزاریPotential induced degradation - تخریب القا شده بالقوهCVD - رسوب دهی شیمیایی بخار Chemical vapour deposition - رسوبات بخار شیمیاییSurface recombination velocity - سرعت بازسازی سطحSilicon dioxide - سیلیکون دی اکسیدCapacitance–voltage - ظرفیت ولتاژmetal-oxide-semiconductor - فلز اکسید نیمه هادیLow-temperature processing - پردازش کم دماExpanding thermal plasma - گسترش پلاسما حرارتی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Electronic surface passivation of p-type crystalline silicon by anodic silicon dioxide (SiO2) was investigated. The anodic SiO2 was grown by light-induced anodisation (LIA) in diluted sulphuric acid at room temperature, a process that is significantly less-expensive than thermal oxidation which is widely-used in silicon solar cell fabrication. After annealing in oxygen and then forming gas at 400 °C for 30 min, the effective minority carrier lifetime of 3-5 Ω cm, boron-doped Czochralski silicon wafers with a phosphorus-doped 80 Ω/â¡ emitter and a LIA anodic SiO2 formed on the p-type surface was increased by two orders of magnitude to 150 μs. Capacitance-voltage measurements demonstrated a very low positive charge density of 3.4 Ã 1011 cmâ2 and a moderate density of interface states of 6 Ã 1011 eVâ1 cmâ2. This corresponded to a silicon surface recombination velocity of 62 cm sâ1, which is comparable with values reported for other anodic SiO2 films, which required higher temperatures and longer growth times, and significantly lower than oxides grown by chemical vapour deposition techniques. Additionally, a very low leakage current density of 3.5 Ã 10â10 and 1.6 Ã 10â9 A cmâ2 at 1 and â1 V, respectively, was measured for LIA SiO2 suggesting its potential application as insulation layer in IBC solar cells and a barrier for potential induced degradation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 323, 30 December 2014, Pages 40-44
Journal: Applied Surface Science - Volume 323, 30 December 2014, Pages 40-44
نویسندگان
Jie Cui, Nicholas Grant, Alison Lennon,