Keywords: سرعت بازسازی سطح; Passivation; Numerical simulation; Silicon solar cell; Surface recombination velocity; c-Si(p); boron doped crystalline silicon; Qwf; equivalent charge density due to workfunction difference between aluminum and c-Si(p) (qcmâ2); Qf; fixed charge density
مقالات ISI سرعت بازسازی سطح (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Keywords: سرعت بازسازی سطح; H-termination; bulk lifetime; surface recombination velocity; solar cells;
Keywords: سرعت بازسازی سطح; Monte-Carlo simulation; Nano-EBIC; Nanocrystal; Surface recombination velocity; Collection/capture probability;
Keywords: سرعت بازسازی سطح; a-Si:H; Hydrogenated Amorphous Silicon; ALD; Atomic Layer Deposition; BSF; Back Surface Field; c-Si; Crystalline Silicon; HIT; Heterojunction with Intrinsic Thin layer; ICP-CVD; Inductively-Coupled Plasma Chemical Vapor Deposition; PVD; Physical Vapor Dep
Keywords: سرعت بازسازی سطح; 350.1820; 040.5160; 140.3440; 140.6810; Laser irradiation; Relative responsivity; Surface recombination velocity; Degradation process;
Electrical and optical characterization of SiOxNy and SiO2 dielectric layers and rear surface passivation by using SiO2/SiOxNy stack layers with screen printed local Al-BSF for c-Si solar cells
Keywords: سرعت بازسازی سطح; Rear surface passivation; c-Si solar cell; Refractive index; Interface trap density; Surface recombination velocity;
Enhancement of physical properties of stain-etched porous silicon by integration of WO3 nanoparticles
Keywords: سرعت بازسازی سطح; Porous silicon; Passivation; Tungsten oxide; Photoluminescence; Surface recombination velocity; Minority carrier lifetime;
Bulk and interface recombination in planar lead halide perovskite solar cells: A Drift-Diffusion study
Keywords: سرعت بازسازی سطح; Perovskite solar cell; Drift-Diffusion equations; Defect density; Surface recombination velocity; Shockley-queisser limit;
Analytical modelling of via-associated recombination losses in MWT solar cells
Keywords: سرعت بازسازی سطح; Metallization Wrap Through; surface recombination velocity; dark saturation current density; lifetime;
Nano-EBIC analysis: An attempt to describe the surface recombination effects by the modified Donolato probability
Keywords: سرعت بازسازی سطح; Monte-Carlo simulation; Nano-scale electrode; Surface recombination velocity; Opening angle; Collection probability;
Surface Recombination Velocity of Local Al-contacts of PERC Solar Cells Determined from LBIC Measurements and 2D Simulation
Keywords: سرعت بازسازی سطح; PERC; voids; surface recombination velocity; simulation; LBIC;
Influence of annealing in H atmosphere on the electrical properties of Al2O3 layers grown on p-type Si by the atomic layer deposition technique
Keywords: سرعت بازسازی سطح; Al2O3; Capacitance; Surface recombination velocity; Hydrogen; Defects; Density of interface states
Low surface recombination velocity in n-Si passivated by catalytic-chemical vapor deposited alumina films
Keywords: سرعت بازسازی سطح; Solar cells; Passivation films; Alumina films; Hot-Wire CVD; Cat-CVD; Surface recombination velocity; Al2O3;
Reduction of surface recombination velocity by rapid thermal annealing of p-Si passivated by catalytic-chemical vapor deposited alumina films
Keywords: سرعت بازسازی سطح; Surface recombination velocity; Alumina passivation film; Solar cell; Cat-CVD; HW-CVD; Rapid thermal annealing
Effect of hydrogen on passivation quality of SiNx/Si-rich SiNx stacked layers deposited by catalytic chemical vapor deposition on c-Si wafers
Keywords: سرعت بازسازی سطح; Si-rich SiNx; Silicon nitride; Passivation quality; Catalytic CVD; Fixed charges; Hydrogen content; Surface recombination velocity
Influence of the Ar8+ and O6+ ion implantation on the recombination parameters of p and n type implanted Si samples investigated by means of the photothermal infrared radiometry
Keywords: سرعت بازسازی سطح; Semiconductors; Recombination lifetime; Surface recombination velocity; Ion implantation; Photothermal radiometry
Effective surface passivation of p-type crystalline silicon with silicon oxides formed by light-induced anodisation
Keywords: سرعت بازسازی سطح; CV; capacitance-voltage; CVD; chemical vapour deposition; Cz; Czochralski; ETP; expanding thermal plasma; LIA; light-induced anodisation; MOS; metal-oxide-semiconductor; PID; potential induced degradation; QSS-PL; quasi steady state photoluminescence; S
Enhanced performance of silicon solar cells by application of low-cost sol–gel-derived Al-rich ZnO film
Keywords: سرعت بازسازی سطح; Silicon solar cells; Passivating layers; Al-rich zinc oxide; Surface recombination velocity
Influence of Al content on surface passivation properties of Al rich ZnO films for solar cell application
Keywords: سرعت بازسازی سطح; Silicon solar cells; Passivating layers; Al rich zinc oxide; Surface recombination velocity;
Efficiency improvement of crystalline silicon solar cells with a back-surface field produced by boron and aluminum co-doping
Keywords: سرعت بازسازی سطح; Silicon solar cell; Back-surface field; Surface recombination velocity; Boron and aluminum co-doping
Passivation characteristics of SiNx/a-Si and SiNx/Si-rich-SiNx stacked layers on crystalline silicon
Keywords: سرعت بازسازی سطح; Si-rich silicon nitride; Amorphous silicon; Solar cell efficiency; Cat-CVD; Passivation; Surface recombination velocity
Passivation properties of nitric/phosphoric etching on CdTe films: Influence of the etching time and nitric acid concentration
Keywords: سرعت بازسازی سطح; Passivation; Photoacoustic; Photoluminescence; CdTe; Thin film; Surface recombination velocity
Ultralow surface recombination in p-Si passivated by catalytic-chemical vapor deposited alumina films
Keywords: سرعت بازسازی سطح; Catalytic-CVD; Hot-wire deposition; Solar cells; Passivation films; Aluminum-oxide films; Surface recombination velocity
Effect of air ambient on surface recombination and determination of diffusion length in silicon wafer using photocurrent generation method
Keywords: سرعت بازسازی سطح; Thin Si wafer; Diffusion length; Surface recombination velocity; Induced n+–p–p+ structure
Semiconductor parameter extraction using cathodoluminescence and genetic algorithms
Keywords: سرعت بازسازی سطح; Cathodoluminescence; Parameter extraction; Genetic algorithms; Optimization; Absorption coefficient; Diffusion length; Dead layer thickness; Surface recombination velocity; Relative quantum efficiency
Non-destructive evaluation of carrier transport properties in CuInS2 and CuInSe2 thin films using photothermal deflection technique
Keywords: سرعت بازسازی سطح; Photothermal; Thinfilm; Mobility; Carrier lifetime; Surface recombination velocity
The effects of radiation-induced interface traps on base current in gated bipolar test structures
Keywords: سرعت بازسازی سطح; Bipolar junction transistors; Ionizing radiation; Fermi level; Interface traps; Surface recombination velocity
Analysis of interface recombination and self-absorption effect on the performance of QWIP–HBT–LED integrated device
Keywords: سرعت بازسازی سطح; Surface recombination velocity; Self-absorption; QWIP–HBT–LED; Heterostructure bipolar transistor (HBT); Light emitting diode (LED)
Determination of front surface recombination velocity of silicon solar cells using the short-wavelength spectral response
Keywords: سرعت بازسازی سطح; Silicon solar cell; Surface recombination velocity; Spectral response
An analysis of the factors affecting the alpha parameter used for extracting surface recombination velocity in EBIC measurements
Keywords: سرعت بازسازی سطح; EBIC; Surface recombination velocity; Diffusion length
Modeling the DC gain of 4H-SiC bipolar transistors as a function of surface recombination velocity
Keywords: سرعت بازسازی سطح; Silicon carbide; Bipolar junction transistor; Surface recombination velocity; DC current gain; Device modeling; PISCES-IIB;