کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
728819 | 892853 | 2011 | 7 صفحه PDF | دانلود رایگان |
This paper presents a novel approach for the extraction of five semiconductor-related parameters, that is, the absorption coefficient α, diffusion length L, normalized surface recombination velocity S, dead layer thickness Zt and the relative quantum efficiency Q directly from any theoretical/experimental steady state cathodoluminescence (CL) signal. The extraction technique, based on genetic algorithms (GA), has many advantages such as the simultaneous obtainment of near-optimum values for the five parameters (α, L, S, Zt, Q). Simulation results for an n-type GaAs defect free semi-infinite semiconductor sample show that the proposed approach is successful and a set of parameter values with error less than 12% from the nominal values, in 95% of the cases, can be obtained.
Journal: Materials Science in Semiconductor Processing - Volume 14, Issue 1, March 2011, Pages 62–68