کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1671537 | 1008919 | 2010 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Non-destructive evaluation of carrier transport properties in CuInS2 and CuInSe2 thin films using photothermal deflection technique
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Photothermal deflection technique (PTD) is a non-destructive tool for measuring the temperature distribution in and around a sample, due to various non-radiative decay processes occurring within the material. This tool was used to measure the carrier transport properties of CuInS2 and CuInSe2 thin films. Films with thickness < 1 μm were prepared with different Cu/In ratios to vary the electrical properties. The surface recombination velocity was least for Cu-rich films (5 × 105 cm/s for CuInS2, 1 × 103 cm/s for CuInSe2), while stoichiometric films exhibited high mobility (0.6 cm2/V s for CuInS2, 32 cm2/V s for CuInSe2) and high minority carrier lifetime (0.35 µs for CuInS2, 12 µs for CuInSe2).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 7, 31 January 2010, Pages 1767–1773
Journal: Thin Solid Films - Volume 518, Issue 7, 31 January 2010, Pages 1767–1773
نویسندگان
Anita R. Warrier, K.G. Deepa, Tina Sebastian, C. Sudha Kartha, K.P. Vijayakumar,