کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5349435 | 1503642 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Determination of Schottky barrier heights and Fermi-level unpinning at the graphene/n-type Si interfaces by X-ray photoelectron spectroscopy and Kelvin probe
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Determination of Schottky barrier heights and Fermi-level unpinning at the graphene/n-type Si interfaces by X-ray photoelectron spectroscopy and Kelvin probe Determination of Schottky barrier heights and Fermi-level unpinning at the graphene/n-type Si interfaces by X-ray photoelectron spectroscopy and Kelvin probe](/preview/png/5349435.png)
چکیده انگلیسی
The interface characteristics of graphene/n-type Si samples using X-ray photoelectron spectroscopy (XPS) measurements are investigated. XPS makes it possible to extract a reliable Schottky barrier value. For graphene/n-type Si samples with (without) sulfide treatment, the Schottky barrier height is 0.86 (0.78)Â eV. The Schottky barrier height was increased from 0.78 to 0.86Â eV, indicating that sulfide treatment is effective in passivating the surface of Si (owing to the formation of Si-S bonds). To determine the Fermi-level pinning/unpinning at the graphene/n-type Si interfaces with sulfide treatment, an analysis is conducted according to the Schottky-Mott limit and the actual work function of graphene is examined with the Kelvin probe. It is shown that the Fermi energy level is unpinned and the Schottky barrier value is dependent on the work function of graphene. Investigation of graphene/n-type Si interfaces is important, and providing the other technique for surface potential control is possible.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 322, 15 December 2014, Pages 225-229
Journal: Applied Surface Science - Volume 322, 15 December 2014, Pages 225-229
نویسندگان
Yow-Jon Lin, Jian-Jhou Zeng,