Graphene preparation by annealing of Co/SiC structure

- Low temperature preparation of graphene by the annealing of Co/SiC structures.
- Influence of cooling rates on graphene parameters.
- Analysis of graphene structure by Raman spectroscopy, Atomic Force Microscopy and X-ray Photoelectron Spectroscopy.
- Exfoliation of graphene with help of PMMA, electrical parameters measurement.
- Preparation of bi-layer graphene by the annealing at 850 °C for 10 s.