LSMO thin films with high metal-insulator transition temperature on buffered SOI substrates for uncooled microbolometers

La0.67Sr0.33MnO3 (LSMO) thin films have been grown by a pulsed laser deposition (PLD) on Bi4Ti3O12(BTO)/CeO2/YSZ buffered silicon-on-insulator (SOI) substrates. We compare the properties of these films with results of other authors. We analyse structural properties of LSMO/BTO/CeO2/YSZ/SOI multilayer structure prepared using PLD. Electrical measurements have shown that the temperature corresponding to maximum of resistance derivative (operating temperature of a microbolometer) is about 330 K (well above room temperature) and the highest resistivity of metal-insulator transition is at temperature (TP) above 400 K. Temperature coefficient of the resistance (TCR) has achieved values of 3.4% K−1 at 325 K for some LSMO films. Transmission electron microscopy analysis has confirmed epitaxial growth of all the layers and showed a mosaic character of the LSMO films due to strain relaxation.